Method for controlling the position of a MEMS mirror

ABSTRACT

According to the present invention there is provided a method of controlling the position of a MEMS mirror in a MEMS device, wherein the MEMS device comprises, a MEMS mirror, a magnet which provides a magnetic field (B), an actuating means which operatively cooperates with the MEMS mirror so that it can apply a force to the MEMS mirror which can tilt the MEMS mirror about at least one rotational axis when the actuating means is provided with a drive signal, wherein the magnitude force applied by the actuating means to the MEMS mirror is dependent on the amplitude of the drive signal, and a detection coil which is mounted on the MEMS mirror, the method comprising the steps of, detecting a change in the resistance (R) of the detection coil so as to detect a change in temperature of the MEMS mirror; determining the drive signal amplitude required to maintain the MEMS mirror at a predefined angular position (Θ); providing the actuating means with a drive signal which has an amplitude which is equal to the determined drive signal amplitude.

FIELD OF THE INVENTION

The present invention relates to, a method for controlling the positionof a MEMS mirror in a MEMS mirror device and in particularly, to amethod which compensates for changes in the angular position of the MEMSmirror which occur due to temperature changes in the MEMS mirror.

DESCRIPTION OF RELATED ART

A MEMS micro-mirror device is a device that contains an optical MEMS(Micro-Electrical-Mechanical-System). The optical MEMS micro-mirrordevice may comprise an elliptical, cylindrical, rectangular, square orrandom shape micro-mirror that is adapted to move and to deflect lightover time. The micro-mirror is connected by torsional arms to a fixedpart and can tilt and oscillate along one or two axis. For example itcan oscillate vertically and horizontally. Different actuationprinciples can be used, including electrostatic, thermal,electro-magnetic or piezo-electric. MEMS micro-mirror devices are knownin which the area of these micro-mirrors are around a few mm². In thiscase, the dimensions of the MEMS micro-mirror device, comprising thepackaging, is around ten mm². This MEMS micro-mirror device is usuallymade of silicon, and can be encapsulated in a package that can includethe driving actuation electronics. Various optical components, such asfor example lenses, beam combiner, quarter-wave plates, beam splitterand laser chips, are assembled with the packaged MEMS to build acomplete system.

A typical application of the MEMS micro-mirror devices is for opticalscanning and projection systems. In a projection system, a 2-D or 3-Dimage or video can be displayed on any type of projection surface. In acolour system, each pixel of the image is generated by combiningmodulated red, green and blue laser light, by means of, for example, abeam combiner, to generate a combined light beam which defines a pixelof the image or video. The MEMS micro-mirror in the MEMS micro-mirrordevice directs the combined light beam to a projection surface where thepixel of the image or video is displayed. Successive pixels of the imageor video are display in this manner. By means of its oscillations, theMEMS micro-mirror within the MEMS micro-mirror device will continuouslyscan the combined light beam from left to right and from top to bottom(or according to a different trajectory including e.g. Lissajoutrajectories) so that all the pixels of the image, or video, aredisplayed on the projection surface, successively, pixel-by-pixel. TheMEMS micro-mirror will oscillate about its oscillation axes at afrequency which ensures that the combined light beam is scanned acrossthe projection surface at such a speed that a complete image is visibleto a person viewing.

Typically, the MEMS micro-mirror in a MEMS micro-mirror device is ableto oscillate along a single oscillation axis. Therefore, in order todisplay a 2-D image on a screen a projection system will require twoMEMS micro-mirror devices; a first MEMS micro-mirror device which isrequired to scan the combined light beam along the horizontal and asecond MEMS micro-mirror device which is required to scan the combinedlight beam along the along the vertical. Alternatively the MEMSmicro-mirror in a MEMS micro-mirror device could be configured such thatit can be oscillated about two orthogonal oscillation axes.

The MEMS micro-mirror devices described above are dynamically operatedMEMS micro-mirror devices, in the sense that during operation the MEMSmicro-mirror continuously oscillates about its oscillation axis/axesduring use. An alternative MEMS micro-mirror device includes a staticoperated MEMS micro-mirror device; in static operated MEMS micro-mirrordevices the MEMS micro-mirror does not oscillate continuously about itsoscillation axis/axes. On the contrary in static operated MEMSmicro-mirror devices the MEMS micro-mirror is tilted about itsoscillation axis/axes to a predefined angular position; the MEMSmicro-mirror remains at this predefined angular position.

It will be understood that each of the MEMS micro-mirror devices shownin FIGS. 1 and 2 could be operated as a dynamic MEMS micro-mirror deviceor a static operated MEMS micro-mirror device. If operated as a dynamicMEMS micro-mirror device the MEMS micro-mirror is continuouslyoscillated about its oscillation axis/axes and if operated as a staticMEMS micro-mirror device the MEMS micro-mirror is tilted about itsoscillation axis/axes to a predefined angular position and the MEMSmicro-mirror remains at this predefined angular position.

Referring now to FIGS. 1a and 1b which show a known MEMS micro-mirrordevice 1. FIG. 1a provides a plan view of the MEMS micro-mirror device 1and FIG. 1b shows a cross sectional view of the MEMS micro-mirror device1, taken along A-A′ of FIG. 1 a.

The MEMS micro-mirror device 1 comprises a first support frame 2. Afirst torsional arm 3 a and second torsional arm 3 b connect a MEMSmicro mirror 4 to the support frame 2. In this embodiment the supportframe 2 is fixed (i.e. immovable). The first and second torsional arms 3a,b define a first oscillation axis 7 for the MEMS micro mirror 4. Afirst conduction coil 5 is supported on, and connected to, the MEMSmicro mirror 4. The first conduction coil 5 is arranged to extend, froma first electrical contact 9 a which is located on the support frame 2,along the first torsional arm 3 a, around the perimeter of the MEMSmicro mirror 4 and back along the first torsional arm 3 a to a secondelectrical contact 9 b which is located on the support frame 2. In theMEMS micro-mirror device 1 the conduction coil is shown to be arrangedto have one turn on MEMS micro mirror 4; it will be understood that theconduction coil may extend around the MEMS micro mirror 4 any number oftimes so as to define any number of turns on the MEMS micro mirror 4.

Collectively, the first support frame 2, first and second torsional arms3 a,b and the MEMS micro mirror 4, and first conduction coil 5, definecollectively what is referred to as a MEMS die 10. As shown in FIG. 1bthe MEMS die 10 is arranged in cooperation with a magnet 6 such thefirst conduction coil 5 is submerged in the magnetic field ‘B’ generatedby the magnet 6.

During use an electric current ‘I’ is passed through the firstconduction coil 5. As the first conduction coil 5 is submerged in themagnetic field ‘B’ created by the magnet 6, the conduction coil 5 willprovide a Laplace force which will be applied to the MEMS micro mirror4. The Laplace force will cause the MEMS micro mirror 4 to move aboutits first oscillation axis 7.

If it is desired to operate the MEMS micro-mirror device 1 as a dynamicMEMS micro-mirror device, then the electric current ‘I’ which is passedthrough the first conduction coil 5 is configured for example to besinuous or square, so that the MEMS micro-mirror 4 is continuouslyoscillated about its first oscillation axis 7. If it is desired tooperate the MEMS micro-mirror device 1 as a static MEMS micro-mirrordevice then the electric current ‘I’ which is passed through the firstconduction coil 5 is configured to be a constant value so that the MEMSmicro-mirror 4 is tilted about its first oscillation axis 7 to apredefined angular position and the MEMS micro-mirror 4 remains at thispredefined angular position; the amount the MEMS micro-mirror 4 istilted is dependent on the amplitude of the constant value electriccurrent ‘I’ which is passed through the first conduction coil 5.

It should be understood that the MEMS micro-mirror device 1 couldalternatively be configured to enable movement of the MEMS micro mirror4 about two orthogonal axes. Such enables that the MEMS micro mirror 4can scan light in two dimensions (typically along the horizontal andvertical) when the device is operated as a dynamic MEMS micro-mirrordevice. FIG. 2 shows a MEMS micro-mirror device 100 which is configuredto enable movement of the MEMS micro mirror 4 about two orthogonal axes.

The MEMS micro-mirror device 20 has many of the same features of theMEMS micro-mirror device 1 shown in FIGS. 1a and 1b ; however in theMEMS micro-mirror device 20 the support frame 2 is configured to bemoveable; the support frame 2 is configured such that it can oscillateabout a second oscillation axis 17, which is orthogonal to the firstoscillation axis 7.

The MEMS micro-mirror device 20 further comprises a fixed part 12 (i.e.an immovably part); the support frame 2 is connected to the fixed part12 via third and fourth torsional arms 13 a,b. The third and fourthtorsional arms 13 a,b, define the second oscillation axis 17. A secondconduction coil 15 is connected to the support frame 2. This secondconduction coil 15 will also be submerged by the magnetic field ‘B’generated by the magnet 6.

A second conduction coil 15 is supported on, and connected to, thesupport frame 2. The second conduction coil 15 is arranged to extend,from a first electrical contact 19 a which is located on the fixed part12, along the third torsional arm 13 a, around the perimeter of thesupport frame 2 and back along the third torsional arm 13 a to a secondelectrical contact 19 b which is located on the fixed part 12. In theMEMS micro-mirror device 100 the second conduction coil 15 is shown tobe arranged to have one turn on support frame 2; it will be understoodthat the conduction coil may extend around the support frame 2 anynumber of times so as to define any number of turns on the support frame2.

Furthermore, in the MEMS micro-mirror device 20 the first and secondelectrical contacts 9 a,9 b for the first conduction coil 5 are locatedon the fixed part 12, and thus the first conduction coil 5 is arrangedto also extend along the support frame 2 and the third and fourthtorsional arms in order to electrically connect to the first and secondelectrical contacts 9 a,9 b.

During use an electric current ‘i’ is passed through the firstconduction coil 5 which is connected to the MEMS micro mirror 4. As thefirst conduction coil 5 is submerged in the magnetic field ‘B’ createdby the magnet 6 the first conduction coil 5 will provide a Laplace forcewhich will be applied to the MEMS micro mirror 4. The Laplace force willcause the MEMS micro mirror 4 to move about the first oscillation axis7. An electric current ‘I’ is also passed through the second conductioncoil 15 which is connected to the support frame 2. As the secondconduction coil 15 is also submerged in the magnetic field ‘B’ createdby the magnet 6, the second conduction coil 15 will provide a Laplaceforce which will be applied to the support frame 2. The Laplace forcewhich is applied to the support frame 2 by the second conduction coil 15will cause the support frame 2, and thus the MEMS micro mirror 4 whichis connected to the support frame 2 via the torsional arms 13 a,b, tomove about the second oscillation axis 17. Accordingly the MEMS micromirror 4 will be moved about the first and second orthogonal oscillationaxes 7,17.

If it is desired to operate the MEMS micro-mirror device 20 as a dynamicMEMS micro-mirror device, then the electric currents ‘i’ ‘I’ which arepassed through the first and second conduction coils 5,15 respectively,are each configured for example to be sinuous or square, so that theMEMS micro-mirror 4 is continuously oscillated about its first andsecond oscillation axes 7,17. If the MEMS micro-mirror device 20 isoperated as a dynamic MEMS micro-mirror device, and if the MEMS micromirror 4 reflects light as it is oscillating about the first and secondorthogonal oscillation axes 7,17, light reflected by the MEMSmicro-mirror 4 will be scanned in two dimensions e.g. horizontal andvertical. This will, for example, enable combined light beams which theMEMS micro mirror 4 receives, to be scanned across the area of aprojection screen in, for example, a zig-zag pattern.

If it is desired to operate the MEMS micro-mirror device 20 as a staticMEMS micro-mirror device then the electric currents ‘i’ ‘I’ which arepassed through the first and second conduction coils 5,15 respectively,are each configured to be constant values so that the MEMS micro-mirror4 is tilted about its first and second oscillation axes 7,17 to apredefined angular position and the MEMS micro-mirror 4 remains at thispredefined angular position; the amount the MEMS micro-mirror 4 istilted is dependent on the amplitude of the constant value electriccurrents ‘i’ ‘I’ which are passed through the first and secondconduction coils 5,15 respectively.

In each of the above-mentioned MEMS micro-mirror device 1,20 thetemperature of the MEMS micro-mirror 4 can change during use. Thetemperature variation in the MEMS micro-mirror 4 can arise due to manyfactors; for example, the temperature of MEMS micro-mirror 4 may beincreased by the first conduction coil 5 which is located on the MEMSmicro-mirror 4 and which heats when conducting the actuation current;the MEMS micro-mirror 4 temperature may vary due to variation in theambient temperature; the temperature of MEMS micro-mirror 4 may beincreased by the laser light which the MEMS micro-mirror 4 reflects;movement of the MEMS micro-mirror 4 about its oscillation axis/axes maycool the MEMS micro-mirror 4. The variation in the temperature of theMEMS micro-mirror 4 will affect the properties of the MEMS micro-mirror4; in particular the variation in the temperature of the MEMSmicro-mirror 4 will affect the stiffness of the MEMS micro-mirror 4.

If the MEMS micro-mirror device 1,20 is operated as a static MEMSmicro-mirror device, then the changes in the properties of the MEMSmicro-mirror 4 will result in the MEMS micro-mirror 4 moving from itspredefined angular position. For example, consider MEMS micro-mirrordevice 1 is operated as a static MEMS micro-mirror device, and aconstant current of 10 milliAmps is provided in the first conductioncoil 5 to move the MEMS micro-mirror 4 to a predefined angular positionof 30° relative to the horizontal normal plane; after some time thetemperature of the MEMS micro-mirror 4 may increase (e.g. MEMSmicro-mirror 4 is heated by the first conduction coil 5) resulting thestiffness of the MEMS micro-mirror 4 decreasing. As the stiffness of theMEMS micro-mirror 4 decreases, and 10 milliAmps continues to be providedin the first conduction coil 5, the MEMS micro-mirror 4 may move to 35°relative to the horizontal normal i.e. the MEMS micro-mirror 4 will tendto become displaced from its predefined angular position.

It will also be understood that during use the temperature of the magnet6 in the MEMS micro-mirror device 1,20 may vary. A variation in thetemperature of the magnet 6 will affect the magnitude of the magneticfield which is provided by the magnet. A change in the magnetic fieldwill result in a change in the Laplace force which is applied to theMEMS micro-mirror 4 which thus can affect the angular positioning of theMEMS micro-mirror 4.

It is an aim of the present invention to obviate or mitigate at leastsome of the above-mentioned disadvantages.

BRIEF SUMMARY OF THE INVENTION

According to the invention, there is provided a method of controllingthe position of a MEMS mirror in a MEMS device, wherein the MEMS devicecomprises, a MEMS mirror, a magnet which provides a magnetic field (B),an actuating means which operatively cooperates with the MEMS mirror sothat it can apply a force to the MEMS mirror which can tilt the MEMSmirror about at least one rotational axis when the actuating means isprovided with a drive signal, wherein the magnitude force applied by theactuating means to the MEMS mirror is dependent on the amplitude of thedrive signal, and a detection coil which is mounted on the MEMS mirror,the method comprising the steps of, detecting a change in the resistance(R) of the detection coil so as to detect a change in temperature of theMEMS mirror; determining the drive signal amplitude required to maintainthe MEMS mirror at a predefined angular position (Θ); providing theactuating means with a drive signal which has an amplitude which isequal to the determined drive signal amplitude.

The drive signal may be a current drive signal or a voltage drivesignal.

Preferably the actuating means is configured so that the force itapplies to the MEMS mirror is depends on the amplitude of the drivesignal which is provided to the actuating means. An increase in thedrive signal causes an increase in the force applied to the MEMS mirror.For example, in the case of electrostatic actuation the relationshipbetween the amplitude of the drive signal (V) and the force applied tothe MEMS mirror is given as:

$F = {\frac{1}{2}\frac{{nt}\;\varepsilon\;\varepsilon\; V^{2}}{d}}$

Thus, the angular position of the MEMS mirror is dependent on theamplitude of the drive signal which is provided to the actuating means.

The drive signal may take any suitable form; typically the drive signalis a current or a voltage.

It will be understood that the drive signal which is provided to theactuating means may have a constant amplitude or a varying amplitude(e.g. a sinusoidal drive signal). If the drive signal is of a constantamplitude then the force applied by the actuating means to the MEMSmirror will be constant and the MEMS mirror will be tilted to thepredefined angular position (Θ) and will remain static at this positionuntil a further temperature change in the MEMS mirror occurs. If thedrive signal is of a varying amplitude (e.g. if the drive signal is asinusoidal drive signal) then the force applied by the actuating meansto the MEMS mirror will vary (e.g. sinusoidally) such that the MEMSmirror will oscillate about its rotational axis, at the maximumamplitude of oscillation the MEMS mirror will be in the predefinedangular position (Θ). Thus, maintaining the MEMS mirror at a predefinedangular position (Θ) includes, maintaining the MEMS mirror at a staticpredefined angular position (Θ), and/or maintaining the amplitude ofoscillation of the MEMS mirror such that at the maximum amplitude ofoscillation the MEMS mirror is at the predefined angular position (Θ).

It should be understood that the force which is applied by the actuatingmeans to the MEMS mirror is: a Laplace force in the case of magneticallyactuated MEMS mirror; an electrostatic force, in the case ofelectrostatically actuated MEMS mirror; or a piezoelectric force, in thecase of piezo-electrically actuated MEMS mirror.

If the drive signal is of varying amplitude then preferably thefrequency of the drive signal is chosen such that no ringing orparasitic mechanical motion occurs when the MEMS mirror oscillates.

The actuating means may comprise a conduction coil which conducts adrive current (I) in the magnetic field, so that a Laplace force isapplied to the MEMS mirror, and wherein the drive current (I) definesthe drive signal.

Alternatively the actuating means may comprise electrostatic material,piezo-electric material and or thermal material. A thermal MEMS actuatoris typically composed by an heating source, and whether a mechanicalpiece which is composed by two or more materials with different thermalexpansion or a mechanical piece with just one material but which isheated an anisotropic way or a combination of that two systems and onceheated, the stress between the two material due to their differentthermal expansion, make them displacing. An electrostatic MEMS actuatormay comprise at least two electrodes on which different voltages areapplied. This induces an electrostatic force between the electrodestending to move one versus the other. A piezoelectric MEMS actuator maycomprise one or more piezoelectric materials of any type and a voltagesource. Applying a voltage difference on one of the piezoelectricmaterial will deform inducing an actuation (motion).

The conduction coil may be used as the detection coil. The MEMS devicemay comprise a single coil, and that single coil may define both theconduction coil and the detection coil. For example, the MEMS device maycomprise a single conduction coil; a drive current may be provided inthe single conduction coil so that a Laplace force is applied to theMEMS mirror to tilt the MEMS mirror about the rotation axis to thepredefined angular position (Θ). The single conduction coil may also beused as the detection coil; the resistance of the conduction coil may bemonitored to detect changes in its resistance. In an alternativeembodiment the MEMS device may have two coils, one conduction coil whichacts as the actuation means when conducting a drive current and a secondcoil which acts as the detection coil, which is mounted on the MEMSmirror and which is monitored for changes in resistance.

In the present invention a detection coil is any electrically conductingcoil which is located on the MEMS and whose electrical resistancechanges with changes of its own temperature. A change in the temperatureof the detection coil may occur due to current flowing in the detectioncoil (called self-heating), and/or due to changes in temperature of theMEMS mirror, which is in thermal communication with the detection coil.

A change in temperature of the MEMS mirror will result in a change intemperature of detection coil. A change in temperature of the detectioncoil will result in a change in the electrical resistance of thedetection coil. Accordingly a change in the resistance of the detectioncoil will indicate that a change in temperature of the MEMS mirror hasoccurred. A change in temperature of the MEMS mirror will affect themechanical properties of the MEMS mirror; for the same force applied tothe MEMS mirror by the actuation means, at different temperatures theMEMS mirror will be tilted to a different angular position.

Therefore, if MEMS mirror is tilted by a force (which is applied by theactuating means) to be static at a predefined angular position (Θ), andif the temperature of the MEMS mirror is then changed, then due to thechange in the mechanical properties of the MEMS mirror the MEMS mirrorwill become displaced from the predefined angular position (Θ). Likewiseif force which is applied by the actuating means to the MEMS mirror issinusoidal so that the MEMS mirror oscillates about its rotational axisto a predefined angular position (Θ) (and a predefined angular position(−Θ)), then a change in temperature of the MEMS mirror will cause theMEMS mirror to oscillate to a different angular position (e.g. Θ+5° and−Θ−5°). In the present invention the drive signal which is provided inthe actuating means is adjusted so that the force which is applied tothe MEMS mirror by the actuating means is adjusted (increased ordecreased) when the temperature of the MEMS mirror changes, so that theMEMS mirror can be maintained at its predefined angular position (Θ).

In the present invention the MEMS mirror is typically a planar structureand the angular position is the angle between the plane of the MEMSmirror and a reference plane. If the MEMS mirror is a curved structurethen angular position is the angle between a tangent at the peak of thecurve and a reference plane. Typically the reference plane is horizontalnormal plane. Typically the reference plane is the plane of the MEMSmirror when the MEMS mirror is at a rest position. Preferably at restposition the MEMS mirror is in a horizontal orientation. Preferably theMEMS mirror is attached by torsional arms to a fixed frame, and thereference plane is a plane of the fixed frame.

The drive signal which is provided to the actuating means may beconstant so that MEMS device is static operated and the steps of,determining the drive signal amplitude required to maintain the MEMSmirror at a predefined angular position (Θ), and the method may comprisethe step of, providing the actuating means with a drive signal which hasan amplitude which is equal to the determined drive signal amplitude,are performed only in response to when a change in the resistance of thedetection coil is detected.

A static operated MEMS mirror device is when the MEMS mirror device isoperated so that the MEMS mirror is tilted to a predefined angularposition and the MEMS mirror remains static at that angular positionwhen there are no temperature changes in the MEMS device. In otherwords, a static operated MEMS mirror device is a MEMS mirror devicewhich is operated so that the MEMS mirror is tilted so that it is staticat a predefined angular position and does not oscillate, or havesmallest as possible oscillation, about its rotational axis. The MEMSdevice is static operated when the drive signal to the actuating meansis constant.

The step of determining the amplitude drive current required to maintainthe MEMS mirror at a predefined angular position (Θ), may comprise thesteps of, determining the stiffness (K) of the MEMS mirror; anddetermining the drive current amplitude (I) using the equation:I=−(((K/(n·B·S))·(Θ/cos Θ))wherein, n is the number of turns in the conduction coil, S is the areaof the MEMS mirror which lies within the turns of the conduction coil(i.e. the conduction coil may be provided at concentric winding on thesurface of the MEMS mirror, S is defined by the area of the MEMS mirrorwhich is enclosed by these windings), B is the magnetic field providedby the magnet, and Θ is the predefined angular position, and I is thedrive current amplitude.

In this case magnetic field B provided by the magnet is considered to beconstant and/or homogeneous around the MEMS actuation and/or detectioncoil. The value for B (at room temperature) is normally taken from adatasheet provided by the magnet manufacturer.

The conduction coil will preferably be positioned on the MEMS mirror andwill be configured as a series of concentric turns on the MEMS mirror.The conduction coil will preferably lie on a plane which is parallel tothe plane of the MEMS mirror. It should be noted that the MEMS mirrormay be mounted to a frame which is configured such that it can oscillateabout the same axis as the MEMS mirror or other oscillation axes; inthis case the conduction coil may alternatively be positioned on theframe. The frame may be attached to a second frame which can oscillateabout one or more oscillation axes; and preferable the oscillation axisof the frame is orthogonal to the oscillation axis of the second frame.The second frame may have a second conduction coil which is used as anactuating means to oscillate the second frame about its oscillationaxis. The second frame may use the conduction coil as a detection meanor may have a separated detection coil, on this second frame

The step of determining the stiffness (K) of the MEMS mirror maycomprise the steps of, determining the resistance of the detection coil;and determining the stiffness K of the MEMS mirror by using theequation:K=R·qwherein, R is the measured resistance of the detection coil and q is aconstant.

The constant q can be derived from an initial characterization of theMEMS device wherein the resistance of the detection coil is measuredusing any suitable resistance measuring tool and the mirror stiffnessare measured or determined using appropriate means. The resistance ofthe detection coil can also be computed by measuring the applied currentand the voltage drop on the coil, then using R=U/I equation. Themeasured values are used to determine q using the equation K=R·q.Assuming the actuating means comprises a conduction coil which conductsa drive current (I), the mirror stiffness may be determined by providinga known current in the conduction coil and then by measuring the mirrorposition (Θ) with an external sensor (photodiode, camera . . . ) forexample, and then determining K using the equation:I=−(((K/(n·B·S))·(Θ/cos Θ))wherein B is the magnetic field provided by the magnet and S is the areaof the MEMS mirror which lies within the turns of the conduction coil(i.e. the conduction coil may be provided at concentric winding on thesurface of the MEMS mirror, S is defined by the area of the MEMS mirrorwhich is enclosed by these windings). Alternatively the mirror stiffnessmay be determined from the resonant frequency (Fr) of the MEMS mirrorusing the equation Fr=(½·π)·(√(K/J)), or by using Finite ElementModelling (FEM) simulation, or using a stiffness measurement tool. Anysuitable means known in the art may be used to determine the resonantfrequency (Fr) of the MEMS mirror.

The step of determining the stiffness (K) of the MEMS mirror maycomprise the steps of, determining the resonant frequency (Fr) of theMEMS mirror; and, determining the MEMS mirror stiffness (K) by using theequation:Fr=(½·π)·(√(K/J))wherein, J is the moment of inertia of the mirror.

Known simulation tools are typically used to determine the moment ofinertia of the MEMS mirror. The simulation tools take account ofproperties of the MEMS mirror such as geometry, thickness and materialproperties to determine the moment of inertia.

The step of determining the resonant frequency (Fr) of the MEMS mirrormay comprise, actuating the MEMS mirror, using a means for actuation, sothat MEMS mirror oscillates about the at least one rotational axis;stopping actuating the MEMS mirror using the means for actuation so thatthe MEMS mirror oscillates freely about the at least one rotationalaxis; measuring voltage which is induced across the detection coil;determining the period of the induced voltage; determining the resonantfrequency (Fr) of the MEMS mirror from the induced voltage, wherein theresonant frequency (Fr) of the MEMS mirror is equal to the inverse ofthe period of the induced voltage.

To determine the resonant frequency (Fr) of the MEMS mirror from theinduced voltage signal Vind(t) one can measure the period of the inducedvoltage signal Vind(t) by measuring the time between two points (e.g.zero crossing) in the induced voltage signal; then invert the period tofind resonant frequency (Fr). It will be understood that the inducedvoltage Vind(t) is voltage will be conducted by the detection coilpreferably. In the case where the actuating means comprise a conductioncoil and the same conduction coil defines the detection coil, theinduced voltage signal will be conducted by the conduction coil. Anotherpossible way to determine the resonant frequency (Fr) of the MEMS mirrorfrom the induced voltage Vind(t) is to fit the induced voltage signalVind(t) with a fitting curve. To do this fitting, it is considered thatthe induced voltage signal Vind(t) has the same shape as the mechanicalmotion of the mirror, as there is a direct relationship between theinduced voltage and the amplitude of oscillation of the mirror. Then itis considered that the mirror is behaving as a basic second order dampedmechanical oscillator, which can be modelled using a well-known secondorder damped mechanical oscillator equation, which can be thenrepresented as a function of an amplitude of oscillation of the mirrorwhich varies over time A(t). Knowing the mechanical behaviour of themirror (second order damped mechanical structure), a fitting techniquecan then be used to compare both the measured induced voltage signalVind(t) curve to a theoretical, expected, induced voltage signal Vind(t)given by the known equations for second order damped oscillators. Fromthis comparison one can calculate the key parameters of the second orderdamped mechanical oscillator equation, one of them begin the resonantfrequency of the mirror (Fr). For example a fitting technique using afunction that find minimum of unconstrained multivariable function usingderivative-free method. The advantage of the fitting technique is thatthe precision is higher as it is less sensitive to noise and measurementerrors. Typically mathematical programs may be used to perform theabove-mentioned calculations to determine the resonant frequency (Fr).

The step of determining the resonant frequency (Fr) of the MEMS mirrormay comprise the steps of, actuating the MEMS mirror using the actuatingmeans so that the MEMS mirror moves about the at least one rotationalaxis; stopping actuating the MEMS mirror using the actuating means sothat the MEMS mirror is left to oscillate freely about the at least onerotational axis without actuation by the actuating means; measuring thespeed (v) of oscillation of the MEMS mirror as it oscillates freelyabout the at least one rotational axis; calculating the resonantfrequency (Fr) of the MEMS mirror using the equation:v=−Θm·e ^(−λ·t)·2π·Fr·cos(√(2π·Fr)²−λ² ·t+φ+cos⁻¹(λ/(2π·Fr)))wherein λ is the damping factor, t is time in seconds, Θm is theposition of the MEMS mirror at the moment the actuation of the MEMSmirror is stopped, and φ is the phase of voltage Vind(t) which isinduced in the detection coil at the moment the MEMS mirror is stopped,the MEMS mirror motion sensing signal at that moment.

The damping factor λ is a constant value (for a system in staticconditions) that describes how oscillations of the MEMS mirror about itsoscillation axis, will decay after a disturbance.

To determine λ, Fr, and φ, a measurement of the mechanical angle ormechanical speed of the MEMS mirror as it oscillates freely about therotational axis is used. To measure the mechanical angle of the MEMSmirror a typical technique is to use a light source which illuminatesthe oscillating MEMS mirror; then, sense the reflected light beam usinga photodiode. Knowing the mechanical relative positioning between thephotodiode, the light source and the MEMS mirror, one can then determinethe oscillation angle of the mirror from the sensed reflected light. Formechanical speed, the induced voltage signal Vind(t) which is conductedin the detection coil when the MEMS mirror oscillates, is representativeof the movement of the MEMS mirror. The induced voltage signal Vind(t)is directly representative of the mirror motion over time; therefore thespeed of the MEMS mirror can be determined from the induced voltagesignal Vind(t). As the MEMS mirror oscillates freely, the speed of theMEMS mirror follows the equation:v=−Θm·e ^(−λ·t)·2π·Fr·cos(√(2π·Fr)²−λ² ·t+φ+cos⁻¹(λ/(2π·Fr)))wherein v is the speed of oscillation of the MEMS mirror. The measuredspeed v forms a speed signal. Having the speed signal and knowing theshape that the speed signal should have (i.e. the theoretical speedsignal) according to the fact that the system behaves as a second orderdamped system, one can fit λ, Fr, Θm and φ. To fit these parameters,there known algorithms are used. Most of the known algorithms evaluatethe sum of the squared errors (between the measured speed signal and thetheoretical speed signal) for different parameters and declare that thegood parameters are found when the sum is minimal.

Alternatively the resonant frequency (Fr) of the MEMS mirror may bedetermined using the equation:Θ(t)=Θm·e ^(−λ·t) cos(√((2π·Fr)²−λ²)·t+φ).This equation uses angular position measurement, the method is the sameas that mentioned above which uses speed measurement, and wherein thevariables of the equation are the same as those mentioned above.

The step of determining the MEMS mirror stiffness (K) may comprise, oneor more of: using information derived from a simulation of the MEMSmirror; using analytical equations of a second order resonatingstructure; and/or reading from a table which was generated in acalibration step, wherein the table comprises a plurality of MEMS mirrorstiffness (K) values each corresponding to a resistance (R) of thedetection coil.

The method may further comprises the step of, determining the resistance(R) of the detection coil; and wherein the step of determining the drivecurrent amplitude required to maintain the MEMS mirror at a predefinedangular position, comprises reading the drive current amplitude (I) froma table in which is stored a plurality of drive current amplitudes (I)and corresponding detection coil resistances (R) and correspondingangular positions.

The method may further comprise the step of generating the table in acalibration step, wherein the calibration step comprises, providing theconduction coil with a plurality of drive current amplitudes (I); and,for each of the plurality of drive current amplitudes (I) provided,measuring the resistance of the detection coil (R) and the angularposition of the MEMS mirror.

The method may further comprise the steps of, selecting a new angularposition which is different to the predefined angular position (Θ); andadjusting the drive signal which is provided to the actuating meansproportionally to the difference between the new angular position andpredefined angular position (Θ).

For example, assuming the actuating means comprises a conduction coilwhich conducts a drive current (I) in the magnetic field, so that aLaplace force is applied to the MEMS mirror, and wherein the drivecurrent (I) defines the drive signal; if the new angular position is 10%greater than the predefined angular position (Θ) then the drive currentwhich is provided in the conduction coil may be adjusted by increasingthe drive current. Thus, preferably any new angular position is achievedby increasing or decreasing the drive current, which is adjusted by apercentage in relation to the percentage difference between thepredefined angular position (Θ) and the new angular position using themethod described in the following example; in this example the angle is10% larger (i.e. 1.1*Θ). To do so, the applied drive current (I) isadjusted so that it provides the new current (In) wherein the newcurrent In is determined from the equation: In=I*(((1+(percentageincrease of angular position/100))*Θ/cos((1+(percentage increase ofangular position/100))*Θ))/(Θ/cos Θ), where I was the applied currentrequired to reach the predefined angular position Θ). In that examplethe percentage increase of angular position is 10%, therefore the valueused in the equation for “percentage increase of angular position/100”is 10/100=0.1.

The method may further comprise the step of, monitoring for furtherchanges in the resistance of the detection coil; and wherein the step ofadjusting the drive signal which is provided to the actuating meansproportionally to the difference between the new angular position andpredefined angular position (Θ), is performed only when the monitoringstep has detected no further changes in the resistance of the detectioncoil. In that case, the detection coil is acting as a regulation loop.

For example, assuming the actuating means comprises a conduction coilwhich conducts a drive current (I) in the magnetic field, so that aLaplace force is applied to the MEMS mirror, and wherein the drivecurrent (I) defines the drive signal; preferably, the step of adjustingdrive current proportionally to the difference between the new angularposition and predefined angular position (Θ), is performed only when theresistance of the detection coil has become stable. The stability of theresistance of the detection coil may be temporary; in this case the stepof adjusting drive current proportionally to the difference between thenew angular position and predefined angular position (Θ), is performedonly when the monitoring step has detected no further changes in theresistance of the detection coil within a predefined time period.

The method may further comprise the steps of, determining a change inthe magnetic field (B) provided by the magnet; adjusting the amplitudeof the drive current (I) which is provided in conduction coilproportionally to the change in magnetic field, so as to compensate forchanges in the Laplace force applied to the MEMS mirror which haveresulted from the change in the magnetic field (B).

For example, if the magnetic field B decreases by 20%, the amplitude ofthe drive current which is provided in the conduction coil may beadjusted by increasing it by an amount necessary to compensate for theloss in the Laplace force which has resulted from the decrease inmagnetic field, so that the Laplace force is maintained constant.Likewise if the if the magnetic field B increases by 20%, the amplitudeof the drive current which is provided in the conduction coil may beadjusted by decreasing it by an amount necessary to compensate for theincrease in the Laplace force which has resulted from the increase inmagnetic field, so that the Laplace force is maintained constant. Itshould be noted that the Laplace force (F) is related to the drivecurrent (I) and magnetic field (B) by the equation:d{right arrow over (F)}=I·d{right arrow over (l)}

{right arrow over (B)}.

The step of determining a change in the magnetic field B provided by themagnet, may comprise, determining a change in the resistance (R) of thedetection coil; determining a change in the temperature of the detectioncoil based on the determined changed in resistance (R) of the detectioncoil, wherein the temperature of the detection coil is equal to thechange in temperature of the magnet; using a relationship between thetemperature and magnetic field B of the magnet to determine the changein the magnetic field B provided by the magnet using the determinedchange in temperature of the detection coil. Typically the manufacturerdata (i.e. data detailing the properties and characteristics of themagnet) with the magnet will provide the relationship between themagnetic field and temperature of the magnet. Typically this is given as3 ppm/° C. meaning that for each 1° C. temperature change (ΔT) of themagnet the change in the magnetic field provided by the magnet (ΔB) willbe equal to −3E-6 Tesla. An initial value of the magnetic field providedby the magnet can be determined from the manufacturer data; knowing theinitial value of B (provided by the manufacturer), the relationship thatthe manufacturer provide (i.e. −3 ppm/° C.) can be used to determine themagnetic field at different temperatures.

The method may comprise the step of measuring an initial magnetic fieldprovided by the magnet, wherein the initial magnetic field is themagnetic field which is provided by the magnet before change in theresistance (R) of the detection coil is determined. The initial magneticfield may be simply read from the manufacturer data which is providewith the magnet. The initial magnetic field may be measured using forexample a Hall sensor. The method may comprise the step of determining amagnetic field provided by the magnet by adding the determined change inthe magnetic field to the initial magnetic field. The method may furthercomprise the step of measuring an initial temperature of the detectioncoil wherein the initial temperature of the detection coil is thetemperature of the detection coil before a change in the resistance (R)of the detection coil is determined. Since the magnetic field isdirectly proportional to temperature (e.g. typically −3 ppm/° C.according to manufacture date) then the new value of the magnetic fieldcan be calculated from the measured temperature of the detection coil.

The method may comprise the step of determining the temperature of themagnet by adding the determined change in the temperature to a priortemperature of the magnet.

Typically, the relationship between the temperature and magnetic field Bof the magnet is given by a manufacturer's data which describes theproperties of the magnet. Also this relationship can be derived based onthe material of the magnet; It is known that in average magnetic fielddependency is −3 ppm/° C., but that can vary from magnet type (NdFB orSmCo) and grade of those magnets. Preferably, the relationship may bedetermined by placing the magnet into temperature chamber and placing aHall sensor next to the magnet which senses the magnetic field createdby the magnet at different temperatures.

The step of determine a change in the temperature of the detection coilbased on the determined changed in resistance (R) of the detection coilmay comprise, using the equation: R=ρ(L/S) to determine the change inthe temperature of the detection coil, wherein L is the length of thedetection coil, and S is the area of the MEMS mirror which lies withinthe turns of the conduction coil (i.e. the conduction coil may beprovided at concentric winding on the surface of the MEMS mirror, S isdefined by the area of the MEMS mirror which is enclosed by thesewindings) and ρ=ρo[1+α(T−To)], wherein ρo is the value of theresistivity of the material of the detection coil used at To, and To isthe temperature of the detection coil when the MEMS mirror was at itsprevious position and α is the temperature coefficient of the materialof the detection coil used and T is the temperature of the detectioncoil.

The resistivity of the material used ρo and the temperature coefficientof the material used α may be determined by using methods known in theart; either theoretically knowing the material used for the detectioncoil (the value of ρo and the temperature coefficient of the materialused α are well-known in the art for different materials), eitherexperimentally measuring the resistance of the detection coil atdifferent temperature. A curve of resistance versus temperature may thenbe obtained.

Values of ρo and α are well known for various metals are common generalknowledge in the field, so the relevant values for ρo and α can bedetermined based on the type of metal which forms the detection coil (orconduction coil if the conduction coil is also used as the detectioncoil).

A stove may be used to determine the resistance of the detection coilfor different temperatures of the detection coil. There is a linearrelationship between resistance and temperature. Using the determinedresistance values at different temperatures one can deduce a lineartrend curve. Using the value at T=T0 (wherein T0 is any arbitrarytemperature taken to define the starting temperature; typically To istaken to be 20° C. or room temperature), one can determine the slope ofthe trend curve and we also know the values of ρo and α based on thematerial of the detection coil and ρ can be calculated using theequation ρ=ρ_(o)[1+α(T−T_(o))]. So, now all the parameters of theequation R=ρ(L/S) are known, so that the resistance of the detectioncoil can be calculated.

The step of determining a change in the magnetic field B provided by themagnet, may comprise, actuating the MEMS mirror, using a means foractuation, so that the MEMS mirror oscillates about the at least onerotational axis; measuring voltage (Vind) which is induced across theconduction coil of the MEMS mirror; determining the magnetic field Bprovided by the magnet using the following equation:Vind=n·B·S·d/dt(Sin(Θ(t))wherein n is the number of turns in the detection coil, S is the area ofthe mirror which lie within the coils of the conduction coil (i.e. theconduction coil may be provided at concentric winding on the surface ofthe MEMS mirror, S is defined by the area of the MEMS mirror which isenclosed by these windings), and Θ(t) is the angle of oscillation of theMEMS mirror, and Vind is the voltage which is induced across thedetection coil when the MEMS mirror is actuated to oscillate therotational axis; determining the difference between the determinedmagnetic field B and a previous value for the magnetic field B.

The previous value for the magnetic field B may be a value for themagnetic field B which has been determined in a prior calculation usingthe equation Vind(t)=n·B·S·d/dt(Sin(Θ(t)). If the MEMS mirror oscillatesabout an oscillation axis it will undergo in sinusoidal motion, thus theinduced voltage signal (Vind(t)) will also have a sinusoidal shape.Alternatively the previous value for the magnetic field B may be a valuewhich is taken from a manufactures data which indicates the magneticfield B provided by the magnet.

All the previous mentioned methods may further be used not consideringthe pure mirror resonant frequency Fr (also called natural frequency),which refers to the first oscillation mode of the mirror, butconsidering the frequencies of an harmonic of its natural frequency, orconsidering one other mechanical motion modes of the mirror (for examplesecond order, third order),

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be better understood with the aid of the descriptionof an embodiment given by way of example only and illustrated by thefigures, in which:

FIG. 1a shows an aerial view of a known MEMS micro mirror device; FIG.1b shown a cross sectional view of the MEMS micro mirror device shown inFIG. 1a along A-A′;

FIG. 2 shows an aerial view of another embodiment of a known MEMS micromirror device;

FIG. 3 shows a flow chart illustrating the steps performed in a methodaccording to a preferred embodiment of the present invention;

FIG. 4 shows a table in which is stored a plurality of drive currentamplitudes (I) and corresponding conduction coil resistances (R) andcorresponding angular positions (Θ);

FIG. 5 is a graph illustrating how the predefined angular position (Θ)of the MEMS mirror is linearly proportional to the drive current whichis provided in the conduction coil for different temperatures.

DETAILED DESCRIPTION OF POSSIBLE EMBODIMENTS OF THE INVENTION

FIG. 1 shows a flow chart illustrating the steps performed in a methodaccording to a preferred embodiment of the present invention. Theillustrated method is a method to control the position of a MEMS mirrorin a MEMS mirror device which comprises some or all of the features ofthe MEMS mirror devices shown in FIGS. 1 and 2. In particular the MEMSmirror device comprises a MEMS mirror, a magnet which provides amagnetic field (B), and an actuating means in the form of an conductioncoil (which also may be referred to as an conduction coil) which canconduct a drive signal in the form of a drive current for example, andwhich is mounted on the MEMS mirror so that a Laplace force can begenerated which can tilt the MEMS mirror about at least one rotationalaxis. It will be understood that the actuating means may take otherconfiguration; for example the actuating means may comprise,electrostatic material which comprises at least two electrodes to whichdifferent voltages may be applied respectively so as to induce anelectrostatic force; piezo-electric material to which voltage may beapplied to cause the piezo-electric material to deform; or thermalmaterial which can expand when heated.

In this particular example the MEMS mirror device is being operated as astatic MEMS mirror device before the method of the present invention iscarried out; that is to say that a constant drive signal, in the form ofa constant drive current for example is provided in the conduction coilso that the MEMS mirror is tilted about its at least one rotational axisto a predefined angular position (Θ) and the MEMS mirror remains at thispredefined angular position (Θ) (i.e. does not oscillate about itsrotational axis). The amplitude of the constant drive current which isprovided to the conduction coil is such that the appropriate Laplaceforce is applied to the MEMS mirror to tilt the MEMS mirror to thepredefined angular position (Θ). It will be understood that the valuefor the predefined angular position (Θ) is defined by the user;typically the predefined angular position (Θ) is the angle between thehorizontal normal and a plane of the MEMS mirror. More preferably thepredefined angular position (Θ) is the angle between a plane defined bya fixed part of the MEMS mirror device to which MEMS mirror is attachedby torsional arms and the plane of the MEMS mirror. The magnitude of theLaplace force will depend on the magnitude of the drive current which isconducted in the conduction coil.

As discussed in the introduction during use the temperature of the MEMSmirror may vary causing a change in the properties of the MEMS mirrorwhich results in the MEMS mirror becoming displaced from its predefinedangular position. As the conduction coil is mounted on the MEMS mirror achange in the temperature of the MEMS mirror will cause a change in thetemperature of the conduction coil; a change in the temperature of theconduction coil will cause a change in the resistance of the conductioncoil. Thus, one can detect a change in the temperature in the MEMSmirror by monitoring for changes in the resistance of the conductioncoil. It will be understood that the conduction coil does not need to bemounted on the MEMS mirror, any suitable cooperation between the MEMSmirror and conduction coil which allows a Laplace force to be applied tothe MEMS mirror when the conduction coil is conducting a drive currentand which allows thermal communication between the MEMS mirror andconduction coil, is possible. The first step of detecting a change inthe resistance (R) of the conduction coil so as to detect that a changein temperature of the MEMS mirror has occurred. The detecting a changein the resistance (R) of the conduction coil preferably arises from astep of monitoring the resistance (R) of the conduction coil and.

A change in the temperature in the MEMS mirror will mean that theproperties of the MEMS mirror have now changed in some way, which,unless compensated for, will cause the MEMS mirror to become displacedfrom its predefined angular position. The method illustrated in FIG. 3,comprises the steps of detecting a change in the resistance (R) of theconduction coil so as to detect that a change in temperature of the MEMSmirror has occurred (301); and when a change in the resistance (R) ofthe conduction coil is detected, the steps of, determining the drivecurrent amplitude (I) required to maintain the MEMS mirror at thepredefined angular position (Θ) (302); and providing a drive currentwhich has the determined drive current amplitude (I) in the conductioncoil (303), are performed. Thus, in the method of the present invention,when a change in the resistance (R) of the conduction coil is detectedthe drive current is adjusted so that Laplace force is adjusted toensure that the MEMS mirror remains at the predefined angular position(Θ). For example, suppose the temperature of the MEMS mirror increases,then the stiffness of the MEMS mirror may reduce, which would otherwisecause the MEMS mirror to tilt more about its rotational axis for thesame Laplace force; in the present invention the drive current isreduced so that the magnitude of the Laplace force is reduced to anappropriate level required to maintain the MEMS mirror at the predefinedangular position (Θ). Likewise, for example, if the temperature of theMEMS mirror decreases, then the stiffness of the MEMS mirror mayincrease, which would otherwise cause the MEMS mirror to tilt less aboutits rotational axis for the same Laplace force; in the present inventionthe drive current is increased so that the magnitude of the Laplaceforce is increased to an appropriate level required to maintain the MEMSmirror at the predefined angular position (Θ).

There are a number of different manners to determine the amplitude ofthe drive current (I) required to maintain the MEMS mirror at thepredefined angular position (Θ). The simplest manner is to read thedrive current amplitude (I) from a table, as shown in FIG. 4, in whichis stored a plurality of drive current amplitudes (I) and correspondingconduction coil resistances (R) and corresponding angular positions. Onemeasures the resistance (R) of the conduction coil using means known inthe art, and knowing the predefined angular position (Θ), one can readfrom the table the drive current amplitude (I) which corresponds to themeasured resistance and predefined angular position (Θ).

The table will be generated in a calibration step, which is performedprior to performing the method illustrated in FIG. 3. The calibrationstep will comprise, providing the conduction coil with a plurality ofdifferent drive current amplitudes (I); and, for each of the pluralityof different drive current amplitudes (I) provided in the conductioncoil, measuring the resistance of the conduction coil (R) and theangular position of the MEMS mirror relative to the horizontal normal.The values for the plurality of drive current amplitudes, theresistances of the conduction coil (R), and the angular position of theMEMS mirror, are logged to generate the table.

Another way to determine the drive current required to maintain the MEMSmirror at the predefined angular position (Θ) includes the performingthe steps of, determining the stiffness (K) of the MEMS mirror and thendetermining the drive current amplitude (I) using the equation:I=−(((K/(n·B·S))·(Θ/cos Θ))wherein, K is the stiffness of the MEMS mirror; n is the number of turnsin the conduction coil; S is the area of the MEMS mirror which lieswithin the turns of the conduction coil (i.e. the conduction coil may beprovided at concentric winding on the surface of the MEMS mirror, S isdefined by the area of the MEMS mirror which is enclosed by thesewindings—S defines that in which is subjected to Laplace force); B isthe magnetic field provided by the magnet of the MEMS mirror device; andΘ is the predefined angular position of the MEMS mirror, and I is thedrive current amplitude.

The stiffness (K) of the MEMS mirror can be determined in a number ofways. One way is to determine the MEMS mirror stiffness (K) comprisesthe steps of, determining the resistance of the conduction coil; andthen determining the stiffness (K) of the MEMS mirror by using theequation:K=R·qwherein, R is the determined resistance of the conduction coil and q isa constant. It will be understood that resistance of the conduction coilmay be determined simply by measuring resistance of the conduction coilusing any suitable means known in the art.

In this embodiment the MEMS device comprises a single conduction coilwhich is used as the actuating means and is also the coil from whichvarious measurements are taken (e.g. resistance (R)); in other words thesingle conduction coil is also used as a detection coil. However, in avariation of the invention two independent coils may be provided in theMEMS device: one conduction coil which may be used exclusively as theactuating means (i.e. to conduct the drive current), and a second coilwhich defines a detection coil from which any necessary measurements aretaken. For example the resistance (R) of the detection coil may bemeasured instead of the resistance of the conduction coil, and used inthe equation K=R·q to determine the stiffness (K) of the MEMS mirror.Likewise, it will be understood that all the other measurements whichare described in this description as being measured from the conductioncoil may alternatively be measured from the detection coil.

The constant q can be derived from an initial characterization of theMEMS device wherein the resistance of the detection coil is measuredusing any suitable resistance measuring tool and the mirror stiffnessare measured or determined using appropriate means. The measured valuesare used to determine q using the equation K=R·q. Assuming the actuatingmeans comprises a conduction coil which conducts a drive current (I),the mirror stiffness may be determined by providing a known current onthe conduction coil and then by measuring the mirror position (Θ) withan external sensor (photodiode, camera . . . ) for example, and thendetermining K using the equation I=−(((K/(n·B·S))·(Θ/cos Θ)) wherein Bis the magnetic field provided by the magnet and S is the area of theMEMS mirror which lies within the turns of the conduction coil (i.e. theconduction coil may be provided at concentric winding on the surface ofthe MEMS mirror, S is defined by the area of the MEMS mirror which isenclosed by these windings—S defines that in which is subjected toLaplace force). Alternatively the mirror stiffness may be determinedfrom the resonant frequency (Fr) of the MEMS mirror using the equationFr=(½·π)·(√(K/J)), or by using Finite Element Modelling (FEM)simulation, or using a stiffness measurement tool. Any suitable meansknown in the art may be used to determine the resonant frequency (Fr) ofthe MEMS mirror.

Another method to determined the stiffness (K) of the MEMS mirror is tofirst determine the resonant frequency (Fr) of the MEMS mirror; and,then determine the stiffness (K) of the MEMS mirror by using theequation:Fr=(½·π)·(√(K/J))wherein, J is the moment of inertia of the MEMS mirror. The moment ofinertia (J) of the MEMS mirror is determined typically by using knownsimulation tools are typically used to determine the moment of inertiaof the MEMS mirror. The simulation tools take account of properties ofthe MEMS mirror such as geometry, thickness and material properties todetermine the moment of inertia.

The resonant frequency (Fr) of the MEMS mirror can be determined anumber of different ways. For example, the resonant frequency (Fr) ofthe MEMS mirror may be determined by, first accelerating the MEMS mirrorabout the at least one rotational axis at a predefined angularacceleration (a), to a predefined angular position (Θm); and thencalculating the resonant frequency (Fr) of the MEMS mirror using theequation:v=−Θm·e ^(−λ·t)·2π·Fr·cos(√(2π·Fr)²−λ² ·t+φ+cos⁻¹(λ/(2π·Fr)))wherein λ is the damping factor, t is time in seconds, Θm is theposition of the MEMS mirror at the moment the actuation of the MEMSmirror is stopped, and φ is the phase of voltage Vind(t) which isinduced in the detection coil at the moment the MEMS mirror is stopped,the MEMS mirror motion sensing signal at that moment.

The damping factor λ is a constant value (for a system in staticconditions) that describes how oscillations of the MEMS mirror about itsoscillation axis, will decay after a disturbance. To determine λ, Fr,and φ, a measurement of the mechanical angle or mechanical speed of theMEMS mirror as it oscillates freely about the rotational axis is used.To measure the mechanical angle of the MEMS mirror a typical techniqueis to use a light source which illuminates the oscillating MEMS mirror;then, sense the reflected light beam using a photodiode. Knowing themechanical relative positioning between the photodiode, the light sourceand the MEMS mirror, one can then determine the oscillation angle of themirror from the sensed reflected light. For mechanical speed, theinduced voltage signal Vind(t) which is conducted in the detection coilwhen the MEMS mirror oscillates, is representative of the movement ofthe MEMS mirror. The induced voltage signal Vind(t) is directlyrepresentative of the mirror motion over time; therefore the speed ofthe MEMS mirror can be determined from the induced voltage signalVind(t). As the MEMS mirror oscillates freely, the speed of the MEMSmirror follows the equation:v=−Θm·e ^(−λ·t)·2π·Fr·cos(√(2π·Fr)²−λ² ·t+φ+cos⁻¹(λ/(2π·Fr)))wherein v is the speed of oscillation of the MEMS mirror. The measuredspeed v forms a speed signal. Having the speed signal and knowing theshape that the speed signal should have (i.e. the theoretical speedsignal) according to the fact that the system behaves as a second orderdamped system, one can fit λ, Fr, Θm and φ. To fit these parameters,there known algorithms are used. Most of the known algorithms evaluatethe sum of the squared errors (between the measured speed signal and thetheoretical speed signal) for different parameters and declare that thegood parameters are found when the sum is minimal. Alternatively theresonant frequency (Fr) of the MEMS mirror may be determined using theequation:Θ(t)=Θm·e ^(−λ·t) cos(√((2π·Fr)²−λ²)·t+φ)This equation uses angular position measurement, the method is the sameas that mentioned above which uses speed measurement, and wherein thevariables of the equation are the same as those mentioned above.

In this example since the MEMS mirror device is operated as a staticMEMS mirror device, the step of accelerating the MEMS mirror about theat least one rotational axis at a predefined angular acceleration (a),will comprise accelerating the MEMS mirror, from a static position,about the at least one rotational axis at a predefined angularacceleration (a). Of course the MEMS mirror will be static at thepredefined angular position (Θ) before it is accelerated. It will beunderstood that the MEMS mirror may be accelerated about the at leastone rotational axis at a predefined angular acceleration (a), using anysuitable actuation means.

Another way to determine the resonant frequency (Fr) of the MEMS mirrorcomprises the steps of, actuating the MEMS mirror, using a suitableactuation means, so that MEMS mirror oscillates about the at least onerotational axis; stopping actuating the MEMS mirror using the means foractuation so that the MEMS mirror oscillates freely about the at leastone rotational axis; measuring voltage which is induced across theconduction coil (or across a second detection coil); determining theperiod of the induced voltage; and determining the resonant frequency(Fr) of the MEMS mirror from the induce voltage, wherein the resonantfrequency (Fr) of the MEMS mirror is equal to the inverse of the periodof the induced current. To determine the resonant frequency (Fr) of theMEMS mirror from the induced voltage signal Vind(t) one can measure theperiod of the induced voltage signal Vind(t) by measuring the timebetween two points (e.g. zero crossing) in the induced voltage signal;then invert the period to find resonant frequency (Fr). It will beunderstood that the induced voltage Vind(t) is voltage will be conductedby the detection coil preferably. In the case where the actuating meanscomprise a conduction coil and the same conduction coil defines thedetection coil, the induced voltage signal will be conducted by theconduction coil. Another possible way to determine the resonantfrequency (Fr) of the MEMS mirror from the induced voltage Vind(t) is tofit the induced voltage signal Vind(t) with a fitting curve. To do thisfitting, it is considered that the induced voltage signal Vind(t) hasthe same shape as the mechanical motion of the mirror, as there is adirect relationship between the induced voltage and the amplitude ofoscillation of the mirror. Then it is considered that the mirror isbehaving as a basic second order damped mechanical oscillator, which canbe modelled using a well-known second order damped mechanical oscillatorequation, which can be then represented as a function of an amplitude ofoscillation of the mirror which varies over time A(t). Knowing themechanical behaviour of the mirror (second order damped mechanicalstructure), a fitting technique can then be used to compare both themeasured induced voltage signal Vind(t) curve to a theoretical,expected, induced voltage signal Vind(t) given by the known equationsfor second order damped oscillators. From this comparison one cancalculate the key parameters of the second order damped mechanicaloscillator equation, one of them begin the resonant frequency of themirror (Fr). For example a fitting technique using a function that findminimum of unconstrained multivariable function using derivative-freemethod. The advantage of the fitting technique is that the precision ishigher as it is less sensitive to noise and measurement errors.Typically mathematical programs may be used to perform theabove-mentioned calculations to determine the resonant frequency (Fr).

In this example since the MEMS mirror device is operated as a staticMEMS mirror device, the step of actuating the MEMS mirror, using a meansfor actuation, so that MEMS mirror oscillates about the at least onerotational axis, will comprise actuating the MEMS mirror, using a meansfor actuation, so that MEMS mirror oscillates, from a static position,about the at least one rotational axis. Of course the MEMS mirror willbe static at the predefined angular position (Θ) before it is actuated.

The actuation means which is used to accelerate or actuation the MEMSmirror may be any suitable means for applying a force to the mirror, forexample the actuation means may be a user may apply a force to the MEMSmirror with their hand directly to the MEMS mirror, or may compriseproviding the conduction coil with a drive current which results inLaplace force applied to the MEMS mirror. The step of stopping actuatingthe MEMS mirror may simply comprise the user refraining from applying aforce to the MEMS mirror or providing no drive current in the conductioncoil.

Alternatively the stiffness (K) of the MEMS mirror could be determinedusing information derived from a simulation of the MEMS mirror; usinganalytical equations of a second order resonating structure; and/orreading from a table which was generated in a calibration step, whereinthe table comprises a plurality of MEMS mirror stiffness (K) values eachcorresponding to a resistance (R) of the conduction coil (or detectioncoil).

During use of the MEMS mirror device the temperature of the magnet mayalso change; the change in temperature of the magnet will cause a changein the magnetic field B provided by the magnet. The change in themagnetic field will result in a change in the Laplace force i.e. (F=I·B,wherein F is the Laplace force, I is the drive current provided in theconduction coil, and B is the magnetic field provided by the magnet).Ultimately a change in the Laplace force would result the MEMS mirrorbecoming displaced from the predefined angular position (Θ). The methodof the present invention compensates for the change in the magneticfield B by further adjusting the magnitude of drive current (I) providedin the conduction coil to maintain the Laplace force, thus MEMS mirroris maintained at its predefined angular position (Θ) even if magneticfield B provided by the magnet changes due to changes in the temperatureof the magnet. Thus, the method illustrated in FIG. 3 further comprisesthe steps of, determining a change in the magnetic field B provided bythe magnet (304), and, adjusting the amplitude of the drive current (I)which is provided in conduction coil proportionally to the determinedchange in magnetic field, so as to compensate for changes in the Laplaceforce applied to the MEMS mirror which have resulted from the change inthe magnetic field (B) (305). For example, if the magnetic field Bdecreases by 20%, the amplitude of the drive current which is providedin the conduction coil may be adjusted by increasing it by an amountnecessary to compensate for the loss in the Laplace force which hasresulted from the decrease in magnetic field, so that the Laplace forceis maintained constant. Likewise if the if the magnetic field Bincreases by 20%, the amplitude of the drive current which is providedin the conduction coil may be adjusted by decreasing it by an amountnecessary to compensate for the increase in the Laplace force which hasresulted from the increase in magnetic field, so that the Laplace forceis maintained constant. It should be noted that the Laplace force (F) isrelated to the drive current (I) and magnetic field (B) by the equation:d{right arrow over (F)}=I·d{right arrow over (l)}

{right arrow over (B)}

In this manner the Laplace force which is applied to the MEMS mirror ismaintained, so that the MEMS mirror is maintained at its predefinedangular position (Θ).

A change in the magnetic field may be determined in a plurality ofdifferent ways. One option for determining a change in the magneticfield B provided by the magnet, comprises first determining a change inthe resistance (R) of the conduction coil (or detection coil). Next achange in the temperature of the conduction coil (or detection coil) isdetermined based on the determined changed in resistance (R) of theconduction coil (or detection coil), wherein the temperature of theconduction coil (or detection coil) is equal to the change intemperature of the magnet. The step of determine a change in thetemperature of the detection coil based on the determined changed inresistance (R) of the detection coil may comprise, using the equation:R=ρ(L/S) to determine the change in the temperature of the detectioncoil, wherein L is the length of the detection coil, and S is the areaof the MEMS mirror which lies within the turns of the conduction coiland ρ=ρo[1+α(T−To)], wherein ρo is the value of the resistivity of thematerial of the detection coil used at To, and To is the temperature ofthe detection coil when the MEMS mirror was at its previous position(i.e. the position of the MEMS mirror when a previous drive currentamplitude, which is different to the drive current amplitude which isnow being provided in the conduction coil, was provided in theconduction coil) and α is the temperature coefficient of the material ofthe detection coil used and T is the temperature of the detection coil.

The resistivity of the material used ρo and the temperature coefficientof the material used α may be determined by using methods known in theart; either theoretically, knowing the material used for the detectioncoil (the value of ρo and the temperature coefficient of the materialused α are well-known in the art for different materials), orexperimentally measuring the resistance of the detection coil atdifferent temperatures. A curve of resistance versus temperature maythen be obtained. Values of ρo and α are common general knowledge in theart for various metals, so one can deduce ρo and α knowing the type ofmetal used for the detection coil.

Next the temperature of the magnet is determined by adding thedetermined change in the temperature to a prior temperature of themagnet (i.e. the temperature of the magnet when a previous drive currentamplitude, which is different to the drive current amplitude which isnow being provided in the conduction coil, was provided in theconduction coil). Preferably the prior temperature of the magnet is thetemperature of the magnet at the time the step 303 is performed. Theprior temperature of the magnet is determined either from a previousiteration of the above-mentioned steps, or by a suitable temperaturesensing means which directly measures the temperature of the magnet atthe time the step 303 is performed, for example using a temperaturesensor chip attached to the magnet.

Finally a relationship between the temperature and magnetic field B ofthe magnet is used to determine the magnetic field B provided by themagnet using the determined temperature of the magnet. Typically themanufacturer data (i.e. data detailing the properties andcharacteristics of the magnet) with the magnet will provide therelationship between the magnetic field and temperature of the magnet.Typically this is given as 3 ppm/° C. meaning that for each 1° C.temperature change (ΔT) of the magnet the change in the magnetic fieldprovided by the magnet (ΔB) will be equal to −3E-6 Tesla.

Another option for determining a change in the magnetic field B providedby the magnet involves first actuating the MEMS mirror, using a meansfor actuation, so that the MEMS mirror oscillates about the at least onerotational axis. When the MEMS mirror oscillates bout the rotationalaxis a voltage (Vind) is induced across the conduction coil (ordetection coil) due to the movement of the current conducting conductioncoil in the magnetic field. The voltage (Vind) which is induced acrossthe conduction coil (or detection coil) is measured. As the MEMS mirroris oscillating about the rotational axis the induced voltage (Vind) willbe sinusoidal or mainly sinusoidal.

The magnetic field B which is provided by the magnet may then bedetermined using the following equation:Vind=n·B·S·d/dt(Sin(Θ(t))wherein n is the number of turns in the detection coil, S is the area ofthe mirror which lie within the coils of the conduction coil (i.e. theconduction coil may be provided at concentric winding on the surface ofthe MEMS mirror, S is defined by the area of the MEMS mirror which isenclosed by these windings), and Θ(t) is the angle of oscillation of theMEMS mirror, and Vind is the voltage which is induced across thedetection coil when the MEMS mirror is actuated to oscillate therotational axis.

To determine the change in the magnetic field B one determines thedifference between the magnetic field B determined using theabove-mentioned equation and a previous value for the magnetic field B.The previous value for the magnetic field B is preferably the magneticfield B which was provided by the magnet at the time the step 303 isperformed. The previous value for the magnetic field B is may be adetermined in a prior calculation using the equation:Vind=n·B·S·d/dt(Sin(Θ(t))

Alternatively the previous value for the magnetic field B may be a valuewhich is taken from a manufactures data which indicates the magneticfield B provided by the magnet.

The method which is illustrated in FIG. 3 may be performed on MEMSmirror device in which, once the temperature of the MEMS mirror andmagnet stabilizes, the predefined angular position (Θ) of the MEMSmirror is linearly proportional to the drive current which is providedin the conduction coil. FIG. 5 is a graph illustrating how thepredefined angular position (Θ) of the MEMS mirror is linearlyproportional to the drive current which is provided in the conductioncoil for different temperatures. Thus, once one has adjusted the drivecurrent appropriately using steps 301-305 one can select a new angularposition which is different to the predefined angular position (Θ)(306); and preferably once the temperature of the MEMS mirror and magnethave stabilized, then adjust the drive current which is provided in theconduction coil proportionally to the difference between the new angularposition and predefined angular position (Θ) so that the MEMS mirror istilted to the new angular position (307).

For example, assuming the actuating means comprises a conduction coilwhich conducts a drive current (I) in the magnetic field, so that aLaplace force is applied to the MEMS mirror, and wherein the drivecurrent (I) defines the drive signal; if the new angular position is 10%greater than the predefined angular position (Θ) then the drive currentwhich is provided in the conduction coil may be adjusted by increasingthe drive current. Thus, preferably any new angular position is achievedby increasing or decreasing the drive current, which is adjusted by apercentage in relation to the percentage difference between thepredefined angular position (Θ) and the new angular position using themethod described in the following example; in this example the angle is10% larger (i.e. 1.1*Θ). To do so, the applied drive current (I) isadjusted so that it provides the new current (In) wherein the newcurrent In is determined from the equation: In=I*(((1+(percentageincrease of angular position/100))*Θ/cos((1+(percentage increase ofangular position/100))*Θ))/(Θ/cos Θ), where I was the applied currentrequired to reach the predefined angular position Θ). In that examplethe percentage increase of angular position is 10%, therefore the valuefor “percentage increase of angular position/100))” in the equation is10/100=0.1.

As mentioned preferably the adjustment of the drive current to tilt theMEMS mirror between to the new angular position is done preferably oncethe temperature of the MEMS mirror has stabilized. As illustrated in theexample shown in FIG. 5, only when the MEMS mirror is at a constanttemperature, is the relationship between the angular position (Θ) of theMEMS mirror linearly proportional to the drive current provided in theconduction coil. One preferably monitors the conduction coil (ordetection coil) for further changes in the resistance of the conductioncoil (or detection coil) in order to determine if the temperature of theMEMS mirror has stabilized. No changes in the resistance of theconduction coil (or detection coil) indicates that the temperature ofthe MEMS mirror has stabilized (since the resistance of the conductioncoil (or detection coil) changes with temperature of the conduction coil(or detection coil) and the temperature of the conduction coil (ordetection coil) changes with changes in temperature of the MEMS mirror).Thus, preferably the method will comprise the steps of monitoring forfurther changes in the resistance of the conduction coil (or detectioncoil); and adjusting the drive current proportionally to the differencebetween the new angular position and predefined angular position (Θ),only when the monitoring step has detected no further changes in theresistance of the conduction coil (or detection coil). For example,assuming the actuating means comprises a conduction coil which conductsa drive current (I) in the magnetic field, so that a Laplace force isapplied to the MEMS mirror, and wherein the drive current (I) definesthe drive signal; preferably, the step of adjusting drive currentproportionally to the difference between the new angular position andpredefined angular position (Θ), is performed only when the resistanceof the detection coil has become stable. The stability of the resistanceof the detection coil may be temporary; in this case the step ofadjusting drive current proportionally to the difference between the newangular position and predefined angular position (Θ), is performed onlywhen the monitoring step has detected either no further changes, or nopassing over defined threshold or defined delta value, in the resistanceof the detection coil within a predefined time period.

A further embodiment of the invention the method may comprise the stepsof determining a change in the magnetic field (B) provided by themagnet; and adjusting the amplitude of the drive current (I) which isprovided in conduction coil proportionally to the change in magneticfield, so as to compensate for changes in the Laplace force applied tothe MEMS mirror which have resulted from the change in the magneticfield (B). For example, if the magnetic field B decreases by 20%, theamplitude of the drive current which is provided in the conduction coilmay be adjusted by increasing it by an amount necessary to compensatefor the loss in the Laplace force which has resulted from the decreasein magnetic field, so that the Laplace force is maintained constant.Likewise if the if the magnetic field B increases by 20%, the amplitudeof the drive current which is provided in the conduction coil may beadjusted by decreasing it by an amount necessary to compensate for theincrease in the Laplace force which has resulted from the increase inmagnetic field, so that the Laplace force is maintained constant. Itshould be noted that the Laplace force (F) is related to the drivecurrent (I) and magnetic field (B) by the equation:d{right arrow over (F)}=I·d{right arrow over (l)}

{right arrow over (B)}.

The step of determining a change in the magnetic field B provided by themagnet, may comprises; determining a change in the resistance (R) of thedetection coil; determining a change in the temperature of the detectioncoil based on the determined changed in resistance (R) of the detectioncoil, wherein the temperature of the detection coil is equal to thechange in temperature of the magnet; and using a relationship betweenthe temperature and magnetic field B of the magnet to determine thechange in the magnetic field B provided by the magnet using thedetermined change in temperature of the detection coil. The step mayfurther comprise adding a delay time between the time when a change inresistance occurs and the time when the temperature is taken as inputinformation to define the change in temperature of the magnet. This ismade in order to take into account the heat transfer time between themirror and the magnet.

Typically the manufacturer data (i.e. data detailing the properties andcharacteristics of the magnet) with the magnet will provide therelationship between the magnetic field and temperature of the magnet.Typically this is given as 3 ppm/° C. meaning that for each 1° C.temperature change (ΔT) of the magnet the change in the magnetic fieldprovided by the magnet (ΔB) will be equal to −3E-6 Tesla. An initialvalue of the magnetic field provided by the magnet can be determinedfrom the manufacturer data; knowing the initial value of B (provided bythe manufacturer), the relationship that the manufacturer provide (i.e.−3 ppm/° C.) can be used to determine the magnetic field at differenttemperatures.

The method may comprise the step of measuring an initial magnetic fieldprovided by the magnet, wherein the initial magnetic field is themagnetic field which is provided by the magnet before change in theresistance (R) of the detection coil is determined. The initial magneticfield may be simply read from the manufacturer data which is providewith the magnet. The initial magnetic field may be measured using forexample a Hall sensor. The method may comprise the step of determining amagnetic field provided by the magnet by adding the determined change inthe magnetic field to the initial magnetic field. The method may furthercomprise the step of measuring an initial temperature of the detectioncoil wherein the initial temperature of the detection coil is thetemperature of the detection coil before a change in the resistance (R)of the detection coil is determined. Since the magnetic field isdirectly proportional to temperature (e.g. typically −3 ppm/° C.according to manufacture date) then the new value of the magnetic fieldcan be calculated from the measured temperature of the detection coil.

The method may comprise the step of determining the temperature of themagnet by adding the determined change in the temperature to a priortemperature of the magnet.

Typically, the relationship between the temperature and magnetic field Bof the magnet is given by a manufacturers data which describes theproperties of the magnet. Typically this is given as 3 ppm/° C. meaningthat for each 1° C. temperature change (ΔT) of the magnet the change inthe magnetic field provided by the magnet (ΔB) will be equal to −3E-6Tesla. An initial value of the magnetic field provided by the magnet canbe determined from the manufacturer data; knowing the initial value of B(provided by the manufacturer), the relationship that the manufacturerprovide (i.e. −3 ppm/° C.) can be used to determine the magnetic fieldat different temperatures.

Also the relationship between temperature and magnetic field B for themagnet can be derived based on the material of the magnet; It is knownthat in average magnetic field dependency is −3 ppm/° C., but that canvary from magnet type (NdFB or SmCo) and grade of those magnets.Preferably, the relationship may be determined by placing the magnetinto temperature chamber and placing a Hall sensor next to the magnetwhich senses the magnetic field created by the magnet at differenttemperatures.

The step of determine a change in the temperature of the detection coilbased on the determined changed in resistance (R) of the detection coilmay comprise, using the equation: R=ρ(L/S) to determine the change inthe temperature of the detection coil, wherein L is the length of thedetection coil, and S is the area of the MEMS mirror which lies withinthe turns of the conduction coil and ρ=ρo[1+α(T−To)], wherein ρo is thevalue of the resistivity of the material of the detection coil used atTo, and To is the temperature of the detection coil when the MEMS mirrorwas at its previous position and α is the temperature coefficient of thematerial of the detection coil used and T is the temperature of thedetection coil.

The resistivity of the material used ρo and the temperature coefficientof the material used α may be determined by using methods known in theart; either theoretically knowing the material used for the detectioncoil (the value of ρo and the temperature coefficient of the materialused α are well-known in the art for different materials), eitherexperimentally measuring the resistance of the detection coil atdifferent temperature. A curve of resistance versus temperature may thenbe obtained. Values of ρ and α are well known in the art for variousmetals; therefore one can identify values for ρ and α based on the typeof metal used for the detection coil.

A stove may be used to determine the resistance of the detection coilfor different temperatures of the detection coil. There is a linearrelationship between resistance and temperature. Using the determinedresistance values at different temperatures one can deduce a lineartrend curve. Using the value at T=T0 (wherein T0 is any arbitrarytemperature taken to define the starting temperature; typically To istaken to be 20° C. or room temperature), one can determine the slope ofthe trend curve and we also know the values of ρo and α based on thematerial of the detection coil and ρ can be calculated using theequation ρ=ρ_(o)[1+α(T−T_(o))]. So, now all the parameters of theequation R=ρ(L/S) are known, so that the resistance of the detectioncoil can be calculated.

The step of determining a change in the magnetic field B provided by themagnet, may comprise, actuating the MEMS mirror, using a means foractuation, so that the MEMS mirror oscillates about the at least onerotational axis; measuring voltage (Vind) which is induced across theconduction coil of the MEMS mirror; determining the magnetic field Bprovided by the magnet using the following equation:Vind=n·B·S·d/dt(Sin(Θ(t))wherein n is the number of turns in the detection coil, S is the area ofthe mirror which lie within the coils of the conduction coil (i.e. theconduction coil may be provided at concentric winding on the surface ofthe MEMS mirror, S is defined by the area of the MEMS mirror which isenclosed by these windings), and Θ(t) is the angle of oscillation of theMEMS mirror, and Vind is the voltage which is induced across thedetection coil when the MEMS mirror is actuated to oscillate therotational axis; determining the difference between the determinedmagnetic field B and a previous value for the magnetic field B.

The previous value for the magnetic field B may be a value for themagnetic field B which has been determined in a prior calculation usingthe equation Vind (t)=n·B·S·d/dt(Sin(Θ(t)). If the MEMS mirroroscillates about an oscillation axis it will undergoing sinusoidalmotion, thus the induced voltage signal (Vind) will also have asinusoidal shape Alternatively the previous value for the magnetic fieldB may be a value which is taken from a manufactures data which indicatesthe magnetic field B provided by the magnet.

Various modifications and variations to the described embodiments of theinvention will be apparent to those skilled in the art without departingfrom the scope of the invention as defined in the appended claims.Although the invention has been described in connection with specificpreferred embodiments, it should be understood that the invention asclaimed should not be unduly limited to such specific embodiment.

The invention claimed is:
 1. An apparatus comprising: amicroelectromechanical system (MEMS) mirror; a magnet to provide amagnetic field; an actuator to receive a drive signal and to cooperatewith the magnet to apply a force to the MEMS mirror to tilt the MEMSmirror about at least one rotational axis based in part on the drivesignal; a detection coil coupled to the MEMS mirror; and a driver toprovide the drive signal to the actuator, the driver to determine achange in resistance of the detection coil, determine a drive signalamplitude to maintain the MEMS mirror at a predefined angular positionbased in part on the change in resistance and adjust the amplitude ofthe drive signal based on the drive signal amplitude.
 2. The apparatusof claim 1, the drive signal comprising a drive current, the actuatorcomprising a conduction coil to conduct the drive current in themagnetic field to apply a Laplace force to the MEMS mirror.
 3. Theapparatus of claim 2, wherein the conduction coil is the detection coil.4. The apparatus of claim 2, the driver to adjust the amplitude of thedrive signal in response to the change in resistance of the detectioncoil.
 5. The apparatus of claim 2, the driver to determine the drivesignal amplitude (I) based in part on the following equation:${I = {\frac{K}{n*B*S}*\frac{\Theta}{\cos(\Theta)}}},$ where K is astiffness of the MEMS mirror, n is a number of turns in the conductioncoil, S is an area of the MEMS mirror, B is the magnetic field, and 0 isthe predefined angular position.
 6. The apparatus of claim 5, theconduction coil to surround a portion of the MEMS mirror, Scorresponding to the area of the portion of the MEMS mirror.
 7. Theapparatus of claim 5, the driver to: determine a resistance of thedetection coil; and determine the stiffness of the MEMS mirror based inpart on the determined resistance.
 8. The apparatus of claim 1, thedriver to: determine a difference between the predefined angularposition and a second angular position; and adjust the drive signalamplitude proportionate to the difference.
 9. A method comprising:determining a change in resistance of a detection coil coupled to amicroelectromechanical system (MEMS) mirror, the MEMS mirror to tiltabout at least one rotational axis based in part on a drive signal and amagnetic field; determining a drive signal amplitude to maintain theMEMS mirror at a predefined angular position based in part on the changein resistance; and adjusting the amplitude of the drive signal based onthe drive signal amplitude.
 10. The method of claim 9, wherein the drivesignal comprising a drive current, the MEMS mirror coupled to aconduction coil to conduct the drive current in the magnetic field toapply a Laplace force to the MEMS mirror.
 11. The method of claim 10,wherein the conduction coil is the detection coil.
 12. The method ofclaim 10, comprising adjusting the amplitude of the drive signal inresponse to determining a change in resistance of the detection coil.13. The method of claim 10, comprising determining the drive signalamplitude (I) based in part on the following equation:${I = {\frac{K}{n*B*S}*\frac{\Theta}{\cos(\Theta)}}},$ where K is astiffness of the MEMS mirror, n is a number of turns in the conductioncoil, S is an area of the MEMS mirror, B is the magnetic field, and Θ isthe predefined angular position.
 14. The method of claim 13, comprising:determining a resistance of the detection coil; and determining thestiffness of the MEMS mirror based in part on the determined resistance.15. The method of claim 13, comprising: determining a difference betweenthe predefined angular position and a second angular position; andadjusting the drive signal amplitude proportionate to the difference.16. The method of claim 15, comprising: detecting a further change inthe resistance of the detection coil; and adjusting the drive signalamplitude proportionate to the difference based on detecting the furtherchange.
 17. The method of claim 13, comprising: determining a change inthe magnetic field; and adjusting the drive signal amplitudeproportionate to the change in magnetic field.
 18. The method of claim13, comprising determining the stiffness (K) of the MEMS mirror based onthe following equation: ${{Fr} = {\frac{1}{2}*\pi*\sqrt{\frac{K}{J}}}},$where Fr is a resonant frequency of the MEMS mirror and J is a moment ofinertia of the MEMS mirror.
 19. The method of claim 18, comprising:detecting a voltage induced across the detection coil, the voltageinduced based on the MEMS mirror freely oscillating about the at leastone rotational axis; determining a period of the induced voltage; anddetermining the resonant frequency of the MEMS mirror based on theinduced voltage and the period.